View IRFPS40N50L_230718.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD- 93923B
SMPS MOSFET
IRFPS40N50L
Applications HEXFET(R) Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.087 46A l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low Trr and Soft Diode Recovery l High Performance Optimised Anti-parallel Diode SUPER TO-247AC Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage dv/dtPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case )
Max.
46 29 180 540 4.3 30 25 -55 to + 150 300
Units
A W W/C V V/ns
C
Diode Characteristics
Symbol IS
ISM
VSD trr Qrr IRRM ton l
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units Conditions D --- --- 46 MOSFET symbol showing the A G --- --- 180 integral reverse S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 46A, VGS = 0V --- 170 250 TJ = 25C IF = 46A ns --- 220 330 TJ = 125C di/dt = 100A/s --- 705 1060 nC TJ = 25C --- 1.3 2.0 C TJ = 125C --- 9.0 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) l
Typical SMPS Topologies
Bridge Converters All Zero Voltage Switching
www.irf.com
1
05/09/01
IRFPS40N50L
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.60 --- V/C Reference to 25C, ID = 1mA --- 0.087 0.100 VGS = 10V, ID = 28A 3.0 --- 5.0 V VDS = V GS, ID = 250A --- --- 50 A VDS = 500V, VGS = 0V --- --- 2.0 mA VDS = 400V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 21 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 27 170 50 69 8110 960 130 11200 240 420 Max. Units Conditions --- S VDS = 50V, ID = 46A 380 ID = 46A 80 nC VDS = 400V 190 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 46A ns --- RG = 0.85 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
920 46 54
Units
mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA Notes:
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.23 --- 40
Units
C/W
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 0.86mH, RG = 25,
IAS = 46A (See Figure 12a)
ISD 46A, di/dt 367A/s, VDD V(BR)DSS,
TJ 150C.
2
www.irf.com
IRFPS40N50L
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
10
4.5V
1
4.5V
0.1
1
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 47A
I D , Drain-to-Source Current (A)
2.5
100
TJ = 150 C
2.0
10
1.5
TJ = 25 C
1
1.0
0.5
0.1 4 5 6 7
V DS = 50V 20s PULSE WIDTH 9 10 8 11
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFPS40N50L
1000000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000
20
ID = 47A
100000
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
15
V DS = 400V V DS = 250V V DS = 100V
Ciss
10
1000
Coss
100
Crss
5
10 1 10 100 1000
0 0 100 200 300 400
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
TJ = 150 C
ID , Drain Current (A)
100
100
10us
10
100us
10
TJ = 25 C
1
1ms
0.1 0.2
V GS = 0 V
0.7 1.2 1.7 2.2
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFPS40N50L
50
VDS VGS
RD
40
D.U.T.
+
ID , Drain Current (A)
RG
-VDD
30
10V
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
0.1
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.1 0.001 0.01
PDM t1 t2 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFPS40N50L
EAS , Single Pulse Avalanche Energy (mJ)
2000
1500
TOP BOTTOM ID 21A 30A 46A
VDS L
1 5V
D R IV E R
1000
RG
20V tp
D .U .T
IA S
+ - VD D
A
500
0 .0 1
Fig 12c. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
Starting T , Junction Temperature( C) J
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
tp
V (B R )D SS
IAS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
VGS
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
6
www.irf.com
IRFPS40N50L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
www.irf.com
7
IRFPS40N50L
SUPER TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
0.13 [.005] 16.10 [.632] 15.10 [.595] 5.50 [.216] 4.50 [.178] 2.15 [.084] 1.45 [.058]
0.25 [.010]
BA
2X R 3.00 [.118] 2.00 [.079]
A
13.90 [.547] 13.30 [.524]
1.30 [.051] 0.70 [.028] 20.80 [.818] 19.80 [.780] 4 16.10 [.633] 15.50 [.611] 4
C 1 2 3
B O 1.60 [.063] MAX. E E
14.80 [.582] 13.80 [.544]
4.25 [.167] 3.85 [.152]
5.45 [.215] 2X
3X
1.60 [.062] 1.45 [.058] BA
3X
1.30 [.051] 1.10 [.044]
0.25 [.010]
S ECT ION E-E NOT ES : 1. DIMENS IONING AND T OLE RANCING PER AS ME Y14.5M-1994. 2. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ] 3. CONT ROLLING DIMENS ION: MILLIMET ER 4. OUT LINE CONF ORMS T O JEDEC OUT LINE T O-274AA
2.35 [.092] 1.65 [.065]
LE AD AS S IGNMENT S MOS FET 1 - GATE 2 - DRAIN 3 - S OURCE 4 - DRAIN IGBT 1 - GATE 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/01
8
www.irf.com

▲Up To Search▲

Price & Availability of IRFPS40N50L

	To Download IRFPS40N50L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .